Abstract
Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 × 10−6 Ω-cm2) compared to untreated surfaces (4 × 10−3 Ω-cm2). Subsequent annealing at 300 °C lowers the minimum value achieved to 7 × 10−7 Ω-cm2. Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene.
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