Abstract
Ultraviolet (UV) Nanoimprint Lithography (NIL) is a replication method that is well known for its capability to address a wide range of pattern sizes and shapes. It has proven to be an efficient production method for patterning resist layers with features ranging from a few hundred micrometers and down to the nanometer range. Best results can be achieved if the fundamental behavior of the imprint resist and the pattern filling are considered by the equipment and process parameters. In particular, the material properties and pattern size and shape play a crucial role. For capillary force-driven filling behavior it is important to understand the influencing parameters and respective failure modes in order to optimize the processes for reliable full wafer manufacturing. In this work, the nanoimprint results obtained for different pattern geometries are compared with respect to pattern quality and residual layer thickness: The comprehensive overview of the relevant process parameters is helpful for setting up NIL processes for different nanostructures with minimum layer thickness.
Highlights
Ultraviolet (UV) Nanoimprint Lithography (NIL) is a replication method that is well known for its capability to address a wide range of pattern sizes and shapes
The nanoimprint results obtained for different pattern geometries are compared with respect to pattern quality and residual layer thickness: The comprehensive overview of the relevant process parameters is helpful for setting up NIL processes for different nanostructures with minimum layer thickness
Since it was first mentioned in literature [1], nanoimprint lithography (NIL) emerged into an attractive patterning technique and developed considerably in terms of materials, process technology, and equipment
Summary
Since it was first mentioned in literature [1], nanoimprint lithography (NIL) emerged into an attractive patterning technique and developed considerably in terms of materials, process technology, and equipment. Nanomaterials 2021, 11, 822 lithography is performed contactless, with a certain proximity gap between the mask and the resist, whereas it is obviously inherent to NIL process to contact the surface and fill the structures of the stamp used for patterning. This means that, while for other techniques it is most important to control the pattern quality during exposure by the optical system, in contrast, for NIL it is crucial to control the filling process. This work focuses on detailed analysis of the postimprint residual layer, resist viscosity, and its flowing behavior (redistribution) as well as their respective impact on the filling behavior of various shapes of nanostructures
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