Homogeneity of Residual Layer thickness in UV Nanoimprint Lithography

Abstract

In nanoimprint lithography, control of residual layer thickness is a very important issue. Pattern density variation is inconvenient for nanoimprint lithography but UV nanoimprint is considered more adaptive to pattern density variation thanks to the higher fluidity of UV-curable resin. Despite this consideration, methods to overcome pattern density problems have been developed and adopted in UV nanoimprint lithography. These methods work well; however, it is still remains there a question of whether residual layer thickness uniformity is improved without such methods. In this study, UV nanoimprint is carried out using a conformable contact mechanism, and the impact of pattern density variation and pressing time of nanoimprint on the residual layer profile is investigated for an initially thin UV-curable resin. After recess filling, UV-curable resin moves very locally so as to make the residual layer smoothly change, but does not move sufficiently for the residual layer to be modified across the entire imprint field. For a longer pressing time, the residual layer thickness is decreased only at the edges. A small amount of the UV-curable resin was expelled from the mold, but most was retained between the mold and wafer, and the UV-curable resin moved inward. For realization of a thin and uniform residual layer, the residual layer must be thin throughout the imprint field from the beginning of the pressing process; otherwise the resulting residual layer that is thick only at peripheral regions must be thinned by a long pressing time.