Abstract
A novel approach to operate semiconductor gas sensor at low temperatures avoiding the poisoning of the surface is described. The effects of UV light illumination on the performance of SnO 2 thin film gas sensors toward an oxidising gas of increasing interest due to environmental monitoring, like NO 2 are reported. The thin films gas sensors were prepared according to the rheotaxial growth and thermal oxidation (RGTO) technique with dc sputtering in Ar atmospheres. Results has shown that there is an enhancement of the performances with UV exposure: a decrease in the response and recovery time and no poisoning effect. This is promising for the development of a sensor for NO 2 working at room temperature.
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