Abstract

Hyperspectral imaging and reflectance spectroscopy in the range from 200–380 nm were used to rapidly detect and characterize copper oxidation states and their layer thicknesses on direct bonded copper in a non-destructive way. Single-point UV reflectance spectroscopy, as a well-established method, was utilized to compare the quality of the hyperspectral imaging results. For the laterally resolved measurements of the copper surfaces an UV hyperspectral imaging setup based on a pushbroom imager was used. Six different types of direct bonded copper were studied. Each type had a different oxide layer thickness and was analyzed by depth profiling using X-ray photoelectron spectroscopy. In total, 28 samples were measured to develop multivariate models to characterize and predict the oxide layer thicknesses. The principal component analysis models (PCA) enabled a general differentiation between the sample types on the first two PCs with 100.0% and 96% explained variance for UV spectroscopy and hyperspectral imaging, respectively. Partial least squares regression (PLS-R) models showed reliable performance with R2c = 0.94 and 0.94 and RMSEC = 1.64 nm and 1.76 nm, respectively. The developed in-line prototype system combined with multivariate data modeling shows high potential for further development of this technique towards real large-scale processes.

Highlights

  • Despite several studies having focused on the characterization of copper oxide films, sample homogeneity remains a big challenge in the estimation of their thicknesses over the complete surface. We address this topic in the present contribution using a hyperspectral imaging system in the UV wavelength range for the in-line characterization of copper states and oxide layers thicknesses on direct bonded copper

  • The results show that hyperspectral imaging in the UV range has the potential to predict oxide layer thicknesses and copper states in a rapid and non-destructive manner

  • The thickness of the oxide layers increases with the oxidation time and temperature

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Summary

Introduction

Copper is considered as one of the most important conductors for integrated circuit (IC) packaging and wire bonding. It has significant advantages in comparison to other materials (e.g., aluminum) and is a good alternative for smaller structures. Copper as a metal has a high mechanical stability and excellent electrical and thermal conductivities at low cost [1]. Copper contact surfaces contaminate and interact with oxygen to copper (I) oxide (Cu2 O) and copper (II) oxide (CuO) layers. This process is considered a problem as it influences the conductivity efficiency.

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