UV-blue photodetectors based on n-SnOx/p-diamond heterojunctions

Abstract

Abstract High-performance self-powered UV-blue photodetector was fabricated based on n-SnOx/p-diamond heterojunction. The SnOx film was deposited on the high temperature and high pressure synthetic boron doped diamond wafer by RF magnetron sputtering. This heterojunction device exhibits a good rectification behavior with a rectification ratio of 3.15 × 104 at ±3 V. At zero bias, the device responds in the wavelength ranging from 250 nm to 500 nm with a peak response at 350 nm. The photoresponse rise time and decay time of the device are both less than 2 s under UV-blue illumination with different wavelengths. These results demonstrate that the n-SnOx/p-diamond heterojunction device has potential applications in the field of UV-blue detection.