UV absorption characteristics and element composition of (200) and (111) orientation cubic MgZnO thin films deposited at different temperature by PLD method

Abstract

Cubic structure MgZnO thin films were made on fused quartz substrate at different temperature by PLD method, the preferred orientation of MgZnO thin films changed from (200) to (111) when growth temperature increased because of different substrate surface situation. MgZnO thin film deposited more along (200) orientation at 300 °C with narrower band gap because it contain more Zn atoms in MgZnO lattice than the ones deposited at other temperature, and the UV absorption edge of which is located in longer wavelength position. MgZnO thin film deposited more along (111) orientation at 700 °C with better crystal quality than the ones deposited at other temperature, but the band gap of this sample is wider than the other ones though it also contain more Zn atoms in MgZnO lattice as the one deposited at 300 °C, which is reason from the function of much lower grain boundary density in this MgZnO thin film.