Abstract
Gallium arsenide (GaAs) semiconductor photoanode has been the subject of extensive research due to its promising potential for photoelectrochemical water splitting. However, GaAs photoanodes have been severely limited by stability issues, including photocorrosion, light-induced degradation, and oxidation. The oxidation of GaAs can lead to the formation of surface defects, which reduce the photocurrent generation. Herein, we investigate the effects of surface modification of GaAs photoanodes with electrocatalysts consisting small amount of Pt@NiOOH and their mixture, on the PEC oxygen evolution reaction (OER) performance. Among the pristine samples, Pt@NiOOH-modified GaAs photoanodes showed the lowest onset potential for PEC water oxidation. Here, we demonstrate Pt@NiOOH/GaAs photoanodes can exhibit an ultrahigh stability of 200 h at a large photocurrent density (>25 mA cm-2) in 3-electrode configuration under AM 1.5G one-sun illumination and further provide extremely robust protection for the GaAs surface for over time without any performance degradation, i.e., without any loss of photocurrent, onset potential, or efficiency.
Published Version
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