Abstract
Silicon carbide nanowires are widely used as highly efficient materials for absorbing electromagnetic waves (EMWs) owing to their wide bandgap and strong dielectric loss properties. In this study, SiO2/SiCnw is synthesized via a straightforward and environmentally friendly chemical vapor deposition technique, with coffee husk biochar as the growth template, at temperatures ranging from 1300 ℃ to 1600 ℃. The results indicate that higher reaction temperatures promote the growth of SiO2/SiCnw. The obtained SiO2/SiCnw is a nanostructure material composed of a large amount of SiO2–SiC mixture, and SiO2 coats the surface of SiC nanowires, each ranging from 30 to 200 nm in diameter. The SiO2/SiCnw prepared at 1600 ℃ exhibits the best EMW absorption performance. At a thickness of 3.3 mm and a frequency of 6.3 GHz, SiO2/SiCnw 1600 achieves the optimal reflection loss of − 50.40 dB and a maximum effective absorption bandwidth of 4.52 GHz. Overall, this study provides a broad and economical carbon source for efficient electromagnetic wave absorptive materials and a high-value recycling pathway for waste biomass.
Published Version
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