Abstract
It has been shown that the intensive and broad "red" photoluminescence band in porous silicon is a nonelementary one and could be decomposed on at least three elementary bands. Photoluminescence, ultrasoft X-ray emission spectroscopy, infrared absorption and atomic force microscopy methods were used to study the reasons for both luminescence band appearance in porous silicon photoluminescence spectra, prepared in different technological conditions. The mechanisms of radiative transition for both elementary bands have been discussed as well.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
