Using patterned H-resist for controlled three-dimensional growth of nanostructures

Abstract

We present a study addressing the effectiveness of a monolayer of hydrogen as the lithographic resist for controlled three-dimensional (3D) growth of nanostructures on the Si(100) surface. Nanoscale regions on the H-terminated Si(100) were defined by H-desorption lithography via the biased tip of a scanning tunneling microscope (STM) to create well-defined regions of surface “dangling bonds,” and the growth of 3D nanostructures within these regions was achieved using a simultaneous disilane deposition and STM H-desorption technique. We demonstrate that 3D growth is strongly confined within STM depassivated regions while unpatterned H:Si(100) regions are robust against adsorption of the precursor molecules.