Abstract
An approach is described for stabilizing metal-metal epitaxial interfaces using a thin metallic interlayer. Rutherford backscattering and channeling techniques along with low-energy electron diffraction and keV He+ ion backscattering are used to demonstrate that an atomically thin layer of Ti deposited at the Fe-Al interface, a system well known for considerable intermixing at room temperature, forms a thin interface alloy that prevents interdiffusion and improves epitaxial growth of Fe on Al(100). The structure is stable up to about 200 degrees C.
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