Using constant base current as a boundary condition for one-dimensional AlGaAs/GaAs heterojunction bipolar transistor simulation

Abstract

Using constant base current as a boundary condition, a one-dimensional numerical simulation technique based on the conventional transport equations was developed. Transistor current-voltage curves with base current density as the variable parameter, similar to the experimental data taken from a curve tracer, are obtained. The simulation also produces transistor characteristics, especially base modulation effects, that cannot be obtained easily by using constant base voltage as a boundary condition.