Abstract
Abstract The crystallization of amorphous silicon (a:Si) thin films and metal-silicide compound formation using the plasma arc discharge has been studied using Raman spectroscopy, Auger emission spectroscopy, Rutherford backscattering, photoconductivity measurements and surface morphology examination. Crystal sizes of the order of hundreds of microns were produced from 05 μm thick a:Si film by using a single light pulse having 3–5 Jcm−2 incident energy density. In the nickel-silicide formation study, a high degree of mixing of Ni and Si was found after exposure to an arc light pulse having 45 J cm−2 incident energy density, A 1000 A thick film of Ni was deposited onto a 〈100〉 silicon wafer and covered with a 300A-thick anti-reflection a:Si coating.
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