Abstract
A liquid mixture formed from two benign chemicals, urea and choline chloride, in the molar ratio of 2:1 has been evaluated for post etch residue (PER) removal from copper surface. Residue films were prepared by etching DUV photoresist films coated on copper in CF4/O2 plasma. Film removal was evaluated under immersion cleaning conditions using X-ray photoelectron spectroscopy and scanning electron microscopy and verified using electrochemical impedance spectroscopy measurements. The residue film was effectively removed in the temperature range of 40–70°C. The results of this study show that choline chloride and urea based DES system has the potential to function as a back end of line cleaning formulation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
