Copper Decontamination Ability of Supercritical-CO<sub>2</sub>/Additives on CVD and Spin-On Porous MSQ Materials

Abstract

The paper focused on the development of very dilute mixtures of chelating agents, acids and organic solvents for post etch residue (PER) removal and copper (Cu) low-k decontamination under supercritical CO 2 (SCCO 2 ) foradvanced nodes (< 65nm) BEOL integration. The Cu low-k decontamination ability of each mixture was carried out on Spin-On Dielectric (SOD) and Chemical Vapor Deposition (CVD) porous low-k. The copper decontamination ability of SCCO 2 /additives systems were also studied on ashed and unashed low-k blanket wafers. Finally, the paper presented the Cu decontamination performance and Cu PER removal ability of SCCO 2 /additive systems compared to conventional wet chemistries.