Abstract
The paper focused on the development of very dilute mixtures of chelating agents, acids and organic solvents for post etch residue (PER) removal and copper (Cu) low-k decontamination under supercritical CO 2 (SCCO 2 ) foradvanced nodes (< 65nm) BEOL integration. The Cu low-k decontamination ability of each mixture was carried out on Spin-On Dielectric (SOD) and Chemical Vapor Deposition (CVD) porous low-k. The copper decontamination ability of SCCO 2 /additives systems were also studied on ashed and unashed low-k blanket wafers. Finally, the paper presented the Cu decontamination performance and Cu PER removal ability of SCCO 2 /additive systems compared to conventional wet chemistries.
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