Use of the scanning electron acoustic microscopy (SEAM) for the study OF III–V compound semiconductors

Abstract

AbstractWe present here examples of applications of SEAM for the characterization of III‐V compound semiconductors and the visualisation of defects in devices. The electron acoustic signal can be quantitatively correlated to the total incorporation of impurities in electrically active or nonactive sites. Both act to reduce the lattice thermal conductivity and can be correlated to the appearance of complexes giving rise to deep‐level emission in cathodoluminescence. Introduction of impurities and lattice defects by ion implantation induces a reduction in thermal conductivity. The recovery of lattice disorder by thermal annealing can be estimated from the SEAM signal evolution. In devices, SEAM is a unique nondestructive method to visualise, with submicron spatial resolution, interface compound formation between an ohmic contact and the semiconductor or zones of nonadherence of a metallic overlayer to a semiconductor.