Abstract
Scanning electron acoustic microscopy (SEAM) gives information on thermoelastic and electronic specimen features /1/. For semiconducting material and devices good resolutions and high contrasts can be attained due to the simultaneous appearence of various sound generation mechanisms, the most important being coupling via excess carriers /2/. However, there are disadvantages in usual SEAM caused by the adaption of a detection transducer /3/. For piezoelectric materials (like III–V semiconductors) an additional transducer can be avoided as the sample itself can serve as detector. For the example of InP, requirements for the use of this technique are discussed.KeywordsOhmic ContactGold WireExcess CarrierAcoustic ContactSpecimen DamageThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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