Abstract
Intermediate band (IB) solar cell has shown a significant amount of efficiency improvement. However IB cell suffers from demerits like high rate of recombination. A trade-off between efficiency and recombination is recently proposed by introducing a ratchet band just below the IB. In the present work, a single junction quantum dot (QD) IB cell is proposed by introducing a ratchet band (RB). The concept of carrier life time enhancement is also discussed by the help of RB. The validation of carrier life time enhancement is provided through the study of spectral response (SR), external quantum efficiency (EQE) and internal quantum efficiency (IQE) of the cell. The proposed model is simulated and the results are obtained using Silvaco ATLAS TCAD device simulator.
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