Abstract
The method of determining semiconductor compound homogeneity regions by means of measuring the lattice parameter and density of heat treated samples, as well as the method of determining effective geometrical size and concentration of impurity atoms and native point defects in semiconductor crystals with the sphalerite lattice, have been described. Information on methods of studying the nature, formation mechanisms and concentrations of native point defects in the semiconductor AIIIBV compounds has been generalized.
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