Concentration of native point defects in Si single crystals at high temperatures.

Abstract

The concentration of dominant native defects in a float-zoned Si single crystal at high temperatures was directly determined from the difference between the macroscopic linear thermal expansion and the lattice-parameter thermal expansion. The concentration fraction of native defects in thermal equilibrium at 1300 K is (3.6\ifmmode\pm\else\textpm\fi{}2.7)\ifmmode\times\else\texttimes\fi{}${10}^{\mathrm{\ensuremath{-}}7}$, or (1.8\ifmmode\pm\else\textpm\fi{}1.3)\ifmmode\times\else\texttimes\fi{}${10}^{16}$ atoms ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$. It is found that vacancies are predominant over interstitial atoms in concentration.