Abstract
The special attributes of CuIn 3Se 5 and related In-rich compounds from the (Cu 2Se) x (In 2Se 3) 1− x pseudobinary system are exploited for an absorber layer in a new thin-film photovoltaic cell. Single phase CuIn 3Se 5 films are synthesized by co-evaporation. Bi-layered n-type films from the (Cu 2Se) x (In 2Se 3) 1− x pseudobinary system with Cu-rich surfaces and 0.5 ≥ x ≥ 0.1, are synthesized by sequential deposition. An electrochemical approach, first developed for CuInSe 2, is employed to construct n-(Cu 2Se) x (In 2Se 3) 1 − x/ p-CuISe 3 heterojunctions. This approach leads to a remarkably uniform, clean np-heterointerface and a rough outer surface conducive to light trapping. EPMA, SIMS profiles and XRD analysis examine the (CU 2Se) x (In 2Se 3) 1− x films and the CuISe 3 overlayer. EBIC and I–V analyses investigate the formation of an electrically active n-CuIn 3Se 5/ p-CuISe 3 junction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
