Abstract
A novel electron cyclotron resonance plasma-enhanced chemical vapor deposition process using an alternative carbon-free source, namely TaF 5, is proposed to obtain high quality amorphous Ta 2O 5 films. The excellent physical and electrical properties suggest that this material is clearly compatible with the requirements of high density CMOS operation, as demonstrated by the fabrication of p-channel MOS transistors with a Ta 2O 5 gate insulator.
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