Abstract
A marginal oscillator circuit is described. This circuit was developed for measuring slow photoconductivity kinetics in high resistivity semiconductors. In this measurement technique, the sample is the dielectric of a parallel plate capacitor. This arrangement is compared and contrasted with the alternative configuration where the rf energy is coupled into the sample inductively. The optimum sample parameters for the use of this method are response times in the range 10−5 to 102 s and resistivities from a few hundred to 105 ohm cm.
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