Upward Shift in Conduction Band of Ta2O5 Due to Surface Dipoles Induced by N-Doping

Abstract

Density functional theory calculations were executed to clarify the mechanism of the experimentally observed upward shift in conduction band minimum (CBM) and valence band maximum (VBM) of N-doped Ta2O5, which is used as a photosensitizer in CO2 reduction. Calculations reproduce well the experimental energy levels (with respect to vacuum) of nondoped Ta2O5 and N-doped Ta2O5. Detailed analyses indicate that N-doping induces formations of defects of oxygenated species, such as oxygen atom and surface hydroxyl group, in the Ta2O5, and the defect formations induce charge redistributions to generate excess negative charges near the doped nitrogen atoms and excess positive charges near the defect sites. When the concentration of the doped nitrogen atoms at the surface is not high enough to compensate positive charges induced at the surface defects, the remaining positive charges are compensated by the nitrogen atoms in inner layers. Dipole moments normal to the surface generated in this situation raise the CBM ...