Abstract
Upper critical field of polycrystalline δ-Mo1-xZrxN (0 ≤ x ≤ 0.3) thin films by sol-gel was investigated. It showed that the upper critical field was continuously improved with Zr doping content, and the improvement of ∼10 T in upper critical field was mainly attributed to the combined effects of obvious enhancements in normal-state resistivity with slight changes in Tc, obvious decrease in crystallite/grain size and enhanced microstrains. Flux jump was observed in low-level doped thin films due to enhanced critical current density by Zr doping. Finally, the vortex phase diagram of δ-Mo0.95Zr0.05N thin films was presented, which will provide guidance for investigation about the vortex mechanisms of δ-Mo1-xZrxN thin films.
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