Abstract
The effect of annealing on the superconducting and normal state properties of the Ga-, In-, Ti- and Zr-doped (1 wt%) Cu–Nb composite wires prepared by in situ technique have been investigated in this paper. The wires annealed at 700°C for 10 h and then quenched at room temperature, show a decrease in the superconducting transition temperature, T c, and increase in the transition width, Δ T. Doping of the Cu–Nb wires causes an increase in the normal state resistivity and hence the upper critical field, H C2. This results in a significant increase of J c. Annealing of these doped samples decreases H C2 and J c. In the case of In- and Ga-doped samples J c shows a marginal improvement at lower field but decreases at higher field. Zr and Ti doping appears to be beneficial for the improved J c in these in situ materials.
Published Version
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