Abstract
This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout integrated circuits (ROIC) as a function of temperature, down to 50 K. The analyses of the experimental data are completed using the SEE prediction tool MUSCA SEP3. The conclusions derived from the experimental measurements and related analyses allow to update the current SEE radiation hardness assurance (RHA) for readout integrated circuits of infrared image sensors used at cryogenic temperatures. The current RHA update is performed on SEE irradiation tests at room temperature, as opposed to the operational cryogenic temperature. These tests include SET (Single Event Transient), SEU (Single Event Upset) and SEFI (Single Event Functional Interrupt) irradiation tests. This update allows for reducing the cost of ROIC qualifications and the test setup complexity for each space mission.
Highlights
Space environments are known to be harsh for embedded devices and circuits
It is important to note that if it might be better to confirm this cryogenic temperature independence of Single Event Effects (SEE) for future technologies, the identified physical mechanism must occur, due to the increase in the doping levels used in sub-nanometric complementary metal oxide semiconductor (CMOS) technologies [25]
This paper review presents SEE irradiation tests under heavy ions of test-chip of DFF cells and complete readout integrated circuit (ROIC) devices as a function of temperature down to 50 K
Summary
Failures due to radiation effects can be induced in electronics systems by high energy particles [1,2,3], such as cosmic rays, electrons, and protons. Photonic imagers are increasingly used in space systems and exposed to radiation environments which induce a challenge to their functionalities. These devices are subject to classical radiation effects, such as displacement damage, total ionizing dose (TID) and soft errors (SE). In some cases, single event latchup (SEL) can be induced by high energy particles and could lead to the destruction of the device if the event is not stopped [4]
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