Abstract

Er doped Ge-Ga-S-CsBr chalcohalide glasses were fabricated by melt-quenching method. The properties of upconversion luminescence under the excitation of 1550 nm laser were investigated. Strong green emissions centered at 525 nm and 545 nm, and weak red emission centered at 660 nm, were observed, along with near infrared emission bands centered at 810 nm and 980 nm. The up-conversion fluorescence was contributed to multi-photon involved process. The Si solar cell efficiency slightly increased from 7.28% (without upconversion layer) to 7.32% (using Er doped 0.9(Ge25Ga10S65)-0.1CsBr glass as upconversion layer). The results show that the investigated Er-doped chalcohalide glasses has a potential application for the enhancement of Si solar cell efficiency.

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