Abstract
Over the past decades, silicon is proved to be as a promising material for the development of devices in the fields of nanophotonics and optoelectronics. However, the material so popular at the current time did not find its application in nanoscale radiation sources due to the indirect bandgap of the semiconductor, which leads to low quantum efficiency. This work represents experimental results on the features of the silicon up-conversion photoluminescence enhanced by the optical resonances of the plasmonic nanosponge. The internal configuration of the nanostructure was confirmed by scanning transmission electron microscopy. The optical characterisation was provided by the dark-field spectroscopy, up-conversion photoluminescence generation and life-time measurements. The such new nanostructure type is promising for the development of nanoscale sources of broadband radiation and other applications of silicon photonics.
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