Abstract
Present investigation unveils the role of dopant concentration on properties of thermally evaporated CdSe films where synthesis of 1%, 3%, 5% Zn doped CdSe alloys is accomplished via melt growth approach. The structural studies manifest the development of cubic phased CdSe films where crystallization is occurred along (111) prominent orientation. The intensity of preferred peak is increased and corresponding crystallite size augmented from 25 nm to 60 nm with Zn doping up to 3% and, later crystallite size is decreased to 43 nm at 5% Zn doping. The optical properties explore escalation in absorbance of CdSe films in visible regime with Zn content and optical energy band gap increased from 1.706 eV to 1.730 eV with Zn dopant. The photoluminescence spectra demonstrate emission peaks at ∼601 nm and ∼685 nm positions whose intensity is enhanced up to 3% Zn doping. The electrical characteristics convey formation of Ohmic contacts where undoped CdSe films had lower resistivity vis-à-vis the CdSe:Zn films.
Published Version
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