Abstract
Focusing on the high resistivity together with low intrinsic conduction in BaTiO3–BiMeO3 materials, it can contribute to the development of reliable high-temperature capacitor materials. In this work, x(Bi0·5Li0.5)TiO3-(0.8-x)BaTiO3-0.2BiScO3 (where x ranges from 0 to 0.2) ceramics were fabricated by a solid reaction method. The temperature stability of dielectric permittivity and resistance are improved significantly by the introduce of (Bi0·5Li0.5)TiO3 (referred to as BL) compared to BaTiO3–BiMeO3. The composition discrepancy due to chemical inhomogeneity can be determined by SEM and EDS mapping although XRD exhibit a single perovskite phase. The characteristics of distinct conductivity behaviors in micro-regions was measured by kelvin probe force microscopy (KPFM). The non-stoichiometry gives rise to two kinds of defects for charge compensation: an ionic compensation and oxygen-vacancy compensation in different grains. The increase of the hopping activation energy of charged carries enhances the high-temperature resistance of the system. The sample of x = 0.15 shows very good temperature stability of dielectric permittivity in the temperature range from 200 °C to 400 °C, and that of x = 0.1 exhibits the highest resistivity of 3.6 MΩ cm at 570 °C. The proposed method gives an efficient strategy for improving the dielectric temperature stability and insulation by the special defect compensation in the perovskite oxides.
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