Abstract
We report on the electrical characterization of V-defects in GaN-based heterostructures via Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (C-AFM). The KPFM measurements show for n- and p-doped GaN top layers an increase in the work function within the V-defects. Surprisingly, an increase in the current flow within the V-defects is found by C-AFM in case of the n-doped structure, while current flow into the V-defect is suppressed for the p-doped structure. For a consistent explanation of these results we suggest a model, which is based on an increase in the electron affinity of the {10−11}-surfaces within the V-defects as compared to the planar (0001)-surface.
Published Version
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