Abstract
Pb(Zr,Ti)O 3 (PZT) thin films with Zr/Ti ratio of 50:50 were deposited on Pt/Ti/SiO 2 /Si substrates using the sol-gel method. Since controlling the conditions of heat-treatment is a great role in film growth, post-annealing processes were conducted under different environments. After standard processing, the films were annealed at 600°C under 3 different processes—(a) 30 min in air, (b) 30 min in O 2 ambient and (c) 2 step which was conducted first in air and then in O 2 atmosphere during 30 min respectively. Through electron microscopy and X-ray diffraction, we found that every film was crack-free and highly (111) oriented. Hysteresis measurements showed a generally large polarization value. The fatigue properties differ drastically for every process, showing an abnormal increase near the end of the measurement. The hysteresis loops before and after 1 × 10 10 switching cycles declined for the films annealed under a single-step, but as for the film by the two-step process, the hysteresis showed to increase in magnitude. Such abnormality and fatigue-free property is an unusual result for PZT films prepared on conventional Pt/Ti/SiO 2 /Si substrates.
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