Abstract
Observation of a broad peak in the temperature (T) dependent resistivity (ρ) in Cu substituted Bi2Te3 has been reported earlier, though its origin remains obscured to date. Our investigation reveals that an electronic phase transition accompanied by Fermi level tuning primarily contributes toward the observed ρ(T). The analysis reveals that tuning of the Fermi level affects bulk transport phenomena to produce the unique ρ(T). We have proposed a model to show how the bulk bandgap can affect ρ(T). We have shown that bulk carrier contribution has a greater role in producing such ρ(T), and a detailed discussion supported by temperature dependent ARPES study, Raman study, and XPS study as well as structural study conducted by x-ray diffraction has been presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
