Unlocking structural and photoelectric properties of lead-free double perovskites at high temperature

Abstract

The lead-free double perovskite, increasingly sought for optoelectronic pursuits, is distinguished by its notable stability, optical properties, and non-toxic characteristic. An extensive inquiry into the structural and photoelectric properties of Cs2NaBiCl6 at heightened temperatures was undertaken using experimental evaluations and theoretical computations. The compound Cs2NaBiCl6, synthesized using a hydrothermal technique, was confirmed via various analytical methods. Advanced techniques such as high-temperature X-ray diffraction, X-ray fluorescence, X-ray photoelectron spectroscopy, and selected area electron diffraction were employed for the investigation of its crystal structure. Further investigation of microstructure was undertaken using electron microscopes. High-temperature luminescence stability disclosed a high exciton binding energy of 326 meV. The Huang-Rhys factor (6.4) denotes a robust electron-phonon coupling effect and facile formation of self-trapped excitons (700 nm). Applied first principles render valuable insight into structural and photoelectric nuances, notably at escalated temperatures. Cs2NaBiCl6 as an indirect bandgap semiconductor and details the experimental and theoretical bandgap, which exhibits an increasing trend before subsequently declining at elevated temperatures. These results strongly support the material's high-temperature stability, emphasizing its applicability in applications such as rare-earth-doped phosphors. The dynamic stability of the material, evidenced by its mechanical performance, further underscores its potential for application in photoelectric devices.