Abstract
A novel room-temperature ion source for the production of atomic ions in electron beam within wide ranges of electron energy and current density is developed. The device can operate both as conventional Electron Beam Ion Source/Trap (EBIS/T) and novel Main Magnetic Focus Ion Source. The ion source is suitable for generation of the low-, medium- and high-density microplasma in steady state, which can be employed for investigation of a wide range of physical problems in ordinary university laboratory, in particular, for microplasma simulations relevant to astrophysics and ITER reactor. For the electron beam characterized by the incident energy Ee = 10 keV, the current density je ∼ 20 kA/cm2 and the number density ne ∼ 2 × 1013 cm−3 were achieved experimentally. For Ee ∼ 60 keV, the value of electron number density ne ∼ 1014 cm−3 is feasible. The efficiency of the novel ion source for laboratory astrophysics significantly exceeds that of other existing warm and superconducting EBITs.
Highlights
A novel room-temperature ion source for the production of atomic ions in electron beam within wide ranges of electron energy and current density is developed
In the case of the successive multiple ionization of ions by electron impact, the charge states +q are determined by the ionization factor jeτ, where je is the electron beam current density and τ is the duration of ion bombardment by incident electrons
The method was realized in a device, which was named the Electron Beam Ion Source (EBIS)
Summary
Highly charged ions are the object of scientific investigation in atomic and plasma physics, laboratory astrophysics etc., and the technological tool in the fields of accelerator techniques, ion microscopy, surface machining on the nanoscale, ion therapy and elsewhere. For the ion sources employed in real accelerators, the electron current density falls in the range of 100–500 A/cm2 [4]. Such values of je are not sufficient for the production of highly charged ions of heavy elements of the periodic table. The distinguishing feature of such device is the small length of ion trap of about 2 cm, what allowed one to increase significantly the current density je up to 5 kA/cm and to ionize heavy elements up to uranium [6]. A whole family of ion sources and traps named the Dresden EBIS/Ts was developed on the basis of this technology together with standard methods of obtaining the ultra-high vacuum [10]. The electron beam energy achieved the values of about 10 keV, the current density je of these devices does not exceed 0.3 kA/cm
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