Abstract
The kinetics of recombination of electrons and acceptor-bound holes in AlGaAs-GaAs heterostructure obey a single-exponential decay in the liquid phase of 2D electrons, whereas localization gives rise to a broad spectrum of recombination rates, especially in the magnetic freeze-out regime. This results in a power-law dependence I(t)∝(τ/t)α in the tail of the recombination kinetics, with the universal exponent α=(1−ν)−1 at ν<1 for all the samples examined experimentally in this work.
Published Version
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