Abstract
The current-voltage characteristics of resistive random-access memory cells with Ti/Pr0.7Ca0.3MnO3−δ (PCMO)/Pt stack structures were investigated. The PCMO layer on Pt had a mixed polycrystalline and amorphous structure. The cells displayed interface-type and filament-type resistive switching (RS) depending on the PCMO layer thickness. The interface-type RS was attributed to the migration of oxygen ions, which caused a redox reaction at the Ti/PCMO interface and the formation of a TiOx layer. For filament-type RS, a forming process occurred and this indicated the formation of a conductive filament in the PCMO layer. After forming, the cells showed bipolar and continuous RS similar to interface-type RS. This indicated that both the formation of a conductive filament in the PCMO layer and the redox reaction at the Ti/PCMO interface occur in the same cell. Finally, a qualitative model for the observed RS phenomenon is discussed based on conventional interface-type RS.
Published Version
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