Abstract

In this paper, a novel source/drain Schottky contact technology AlGaN/GaN HEMT device is designed and modelled. Based on this concept, effect of mole fraction in three different HEMT devices is studied using the unique mathematical model. An optimized Al0.2Ga0.8N/GaN HEMT shows an excellent improvement in sheet carrier density and breakdown voltage. Break down voltage (BV) is one of the major concerns in the present day High Electron Mobility Transistor device (HEMT). The proposed device with Lgd of 5μm shows a breakdown voltage of 320V, which is in good agreement with experimental data. In addition to this, drain current, transconductance and frequency is also modelled and simulated using TCAD. Hence Schottky based AlGaN/GaN HEMT is one of the promising candidates for high power applications.

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