Year-end Sale % OFF 
Abstract
The unique extraction method of small-signal substrate parameters for MOSFETs is proposed. To cover the output resistance reduction at microwave frequency range, drain substrate resistance as well as drain junction capacitance is considered. Parasitic series resistances are extracted at the zero-gate-bias cold-FET condition using the asymptotic behavior of Z-parameters. The modeled S-parameters fit the measured ones well without any optimization after parameter extraction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
