Abstract
In this paper, the detailed device dc performance of a gated lateral pnp (LPNP) device that has five terminals, collector C, base B, emitter E, gate G, and substrate S, and is fabricated in a 0.8 μm BiCMOS technology is described. Because this gated LPNP has two inputs and one output, it shows unique dc characteristics of variable current gain, βF, of 102 ~ 104 with VG variations of 0.4 to – 0.4 V; variable transconductance, gM, which increases 3 ~ 10 times as VE increases from 0.4 to 0.7 V. Based on these unique features, this new device is attractive for some analog circuit applications; for example, when used as a mixer, it has a conversion gain of 5–12 dB for an input RF signal up to 400 MHz.
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