Abstract
A measurement approach is described that is used for very accurate bipolar transistor matching characterisation down to the sub 25 /spl mu/V /spl sigma//sub /spl Delta/Vbe/ region or less than 0.1% /spl sigma//sub /spl Delta/Ic/Ic/ collector current mismatch. The sensitivity of this approach is demonstrated through characterisation of small lithographical proximity effects that were found to influence matching of NPN as well as of lateral PNP bipolar junction transistors.
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