Abstract
AbstractIn this work, we present a comprehensive study on the hydrogen impurity depth profiles in InN films with polar c‐plane and nonpolar a‐plane surface orientations in relation to their structural and free‐electron properties. We find that the as‐grown nonpolar films exhibit generally higher bulk and near‐surface H concentrations compared to the polar InN counterparts. The latter may be partly associated with a change in the growth mode from 2D to 3D and a decrease in the grain size. Thermal annealing leads to a reduction of H concentrations and the intrinsic H levels are influenced by the structural characteristics of the films. The factors allowing reduction of bulk H and free electron concentrations in a‐plane films are discussed.
Published Version
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