Abstract
This study deals with the uniformity investigation and comparison on the typical behaviour of pseudomorphic high electron mobility transistors (pHEMTs) before and after the 3-D multilayer fabrication. There are seven multilayer fabricated pHEMTs compared with the seven virgin pHEMTs based on drain-source input current, output current, transconductance, off state leakage behaviour, threshold voltage, knee voltage, on-resistance, Schottky barrier height, ideality factor, reverse saturation current, small signal gain and current gain. Below 10% changes in performance can be seen after multilayer fabrication compare to virgin samples and apart from these exceptions, the discrepancies are well within the tolerance and less than 3% in terms of Schottky behaviour. We show that, the application of the 3D-MMIC technology does not cause any visible destruction of pHEMTs performance using seven different samples before and after the multilayer fabrication.
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