Uniform MBE growth of 2 inch diameter wafer for GaAs/AlGaAs and InGaAs/AlGaAs quantum well lasers

Abstract

Uniform GaAs/AlGaAs and InGaAs/AlGaAs quantum well lasers have been grown by molecular beam epitaxy at high temperatures, where the desorption of Ga or In cannot be neglected. This is achieved by the uniform temperature distribution in our newly developed In-free holder. The graded-index separate-confinement heterostructure (GRIN-SCH) laser with a GaAs quantum well grown at 720°C has shown the threshold current I th of 72±4 mA and the emission wavelength λ of 854.7±0.8 nm. The GRIN-SCH laser with an InGaAs strained single quantum well has been grown at 570°C for an InGaAs well and at 720°C for AlGaAs cladding and GRIN layers without growth interruption. I th is 53±3 mA and λ is 975.5±5.3 nm. The larger variation of λ results from the nonuniform temperature transient just before the growth in InGaAs.