Unified physical I-V model including self-heating effect for fully depleted SOI/MOSFET's

Abstract

A physically based analytical I-V model that includes self-heating effect (SHE) is presented for fully depleted SOI/MOSFET's. The incorporation of SHE is done self-consistently in a fully closed form, making the model very suitable for use in circuit simulators. The model also accounts for the drain induced conductivity enhancement (DICE) and drain induced barrier lowering (DIBL), channel length modulation (CLM), as well as parasitic series resistances (PSR). Another advantage is the unified form of the model that allows us to describe the subthreshold, the near-threshold and the above-threshold regimes of operation in one continuous expression. A continuous transition of current and conductance from the linear to the saturation regimes is also assured. The model shows good agreement with measured data for a wide range of channel lengths (down to 0.28 /spl mu/m) and film thicknesses (94 nm-162 nm).