Unified MOSFET model

Abstract

We present a basic analytical MOSFET model which describes both the below and above threshold regimes of device operation. The description is based on a charge control model which uses one unified expression for the effective differential channel capacitance. The model also accounts for series drain and source resistances, velocity saturation in the channel, finite output conductance in the saturation regime, and for the threshold voltage shift due to drain bias induced lowering of the injection barrier between the source and the channel (DIBL). The model parameters, such as the effective channel mobility, the saturation velocity, the source and drain resistances, etc. are extractable from experimental data. The model has been incorporated into our simulator, AIM-Spice. We apply the characterization procedure based on this model to a MOSFET with a quarter micron gate length and obtain excellent agreement with experimental data.