Abstract
We present a new unified model for long and short-channel polysilicon thin-film transistors (poly-Si TFTs) suitable for circuit simulation. The model is based on the effective medium approximation and should be valid for transistors of channel lengths down to 1 μm. The model accounts for field effect mobility enhancement in the moderate inversion regime and for mobility degradation at high gate voltages, for DIBL effect, kink effect, off-state current and channel-length modulation. Good agreement between the model and the measurements was found for a wide range of channel lengths.
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