Unified HBT base push-out and base-collector capacitance model

Abstract

The presence of electron space-charge in the collector region of a transistor has the effect of offsetting the collector doping thereby giving a reduced effective doping concentration. This effect can modify the base-collector junction capacitance and for high current densities will give rise to base push-out. This paper describes the implementation of a unified junction capacitance and push-out model for the microwave HBT biased in the forward active mode. The threshold functions for pushout and full collector depletion are given and their significance for device and circuit design is discussed. An approximate description of the effect of pushout on the HBT forward time constant is described which accounts for the substantially increased diffusion constant in the pushout region.